China breakthrough in indium selenide (InSe) wafers with perfect stoichiometry

7 david927 1 7/21/2025, 1:11:40 AM news.cgtn.com ↗

Comments (1)

david927 · 13h ago
Quoting William Huo, InSe outperforms silicon in every category that matters:

• 5–10x higher electron mobility

• Atomic thickness

• Tunable bandgap

• Lower power leakage

• Faster switching

So how big of news is this?